Schedule

Technical Program

The AVS 20th International Conference on Atomic Layer Deposition (ALD 2020) featuring the 7th International Atomic Layer Etching Workshop (ALE 2020) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and now topics related to atomic layer etching.  Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. This year, the ALD conference will again incorporate the Atomic Layer Etching 2020 Workshop (ALE 2020), so that attendees can interact freely. The conference will take place Sunday, June 28-Wednesday, July 1, 2020, at the International Convention Center in Ghent, Belgium.

As in past conferences, the meeting will be preceded (Sunday, June 28) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, June 29-July 1) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 800+.

Awards: Both ALD 2020 and ALE 2020 will recognize student achievement with awards for the best student posters and/or talks. See Awards Page

ALD & ALE Tutorial Speakers and Schedule

Sunday, June 28, 2020

ALD & ALE Plenary Speakers and Schedule

Monday, June 29, 2020

ALD Invited Speakers

• Julien Bachmann (University of Erlangen, Germany), “ALD from Dissolved Precursors: Same Principles, Original Materials”
• Chunmei Ban (University of Colorado, USA), “Molecular Layer Deposition for Stabilization of Electrochemical Materials”
• Robert Clark (Tokyo Electron, USA), “Selective and Atomic Scale Processes to Enable Future Nano-Electronics”
• Keith Gregorczyk (University of Maryland, USA), “Conformal Ion Conductors as Enablers for 3D Solid State Energy Storage Systems”
• Bram Hoex (UNSW Photovoltaic & Renewable Energy Engineering, Australia), “ALD Enabling High-Efficiency Solar Cells”
• Andrew Kummel (University of California, San Diego, USA), “Deposition of High Thermal Conductivity AlN Heat Spreader Films”
• Mark Losego (Georgia Tech, USA), “Vapor Phase Infiltration for Transforming Polymers into Organic Inorganic Hybrid Materials: Process Thermodynamics and Kinetics”
• Catherine Marichy (University Lyon, France), “ALD of BN for Membrane Application in Water Treatment”
• Miika Mattinen (Uhelsinki, Finland), “Exploring ALD 2D Chalcogenides Beyond MoS2”
• Toshihide Nabatame (National Institute for Materials Science, Japan), “Study of ALD HfO2-Based High-k for GaN Power Devices and Ferroelectric Devices”
• Viljami Pore (ASM Microchemistry Oy, Finland), “Thermal and Plasma ALD Processes of Silicon Based Dielectric Thin Films”
• Mårten Rooth (Nanexa AB, Uppsala, Sweden), “Using an ALD Formulation to Produce Pharmaceutical Clinical Trial Material Aimed as an Injectable Depot “
• Nathanaelle Schneider (CNRS, France), “Tuning Properties of ALD Oxide and Sulfide Materials for Photovoltaic Applications”
• Mahdi Shirazi (Eindhoven, The Netherlands), “Atomistic Simulation of 2D-TMDs Growth by ALD”
• Henrik Soensteby (University of Oslo, Norway), “Low-temperature Epitaxy of Complex Oxides”
• Myung Mo Sung (Hanyang University, South Korea), “Complementary Organic-Inorganic Hybrid Superlattices”
• Adriana Szeghalmi (Jena, Germany), “Highly Efficient Antireflection Coatings on Strongly Curved Substrates”
• Charles Winter (Wayne State University, USA), “Thermal Atomic Layer Deposition of Noble Metal Films Using Non-Oxidative Coreactants”
• Rudy Wojtecki (IBM, USA), “Monolayer Lithography – Exploiting a Contrast in Inhibition from the Photoirradiation of Organic Monolayers for Area Selective Deposition”
• Matthias Young (University of Missouri, USA), “From the Noise: Measuring Atomic Structure in Amorphous Thin Films Grown by Atomic Layer Deposition”

ALE Invited Speakers

• Sumiko Fujisaki (Hitachi Ltd., Research & Development Group, Japan), “Thermal ALE of Co by Organometallic Complexes”
• Akiko Hirata (Sony Semiconductor Solutions Corp., Japan), “Highly Selective Atomic Layer Etching for Semiconductor Application”
• Anil Mane (Argonne National Lab, USA), “Novel Chemistries for Layer-by-Layer Etching of 2D Semiconductor Coatings and Organic-Inorganic Hybrid Materials”
• Gottlieb Oehrlein (University of Maryland, USA), “Achieving Selective Material Removal in Plasma-Based Atomic Layer Etching (ALE) of SiO2”
• Simon Ruel (CEA-LETI, France), “GaN Damage Evaluation After Conventional Plasma Etching and Anisotropic Atomic Layer Etching”
• Andrew Teplyakov (University of Delaware, USA), “Mechanistic Insights into Thermal Dry Atomic Layer Processing of Metals”
• Noriaki Toyoda (University of Hyogo, Japan), “Surface Reactions Between Metals and Diketone induced by Gas Cluster Ion Bombardments”
• Dennis van Dorp (imec, Belgium), “Atomic Scale Etching of Semiconductors; Digital Versus Non-Digital Approaches”
• Geun Young Yeom (Sungkyunkwan University, South Korea), “Precise Atomic Layer Control of 2D MoS2 by ALE Technique for Device Applications”