Schedule

Technical Program

The AVS 20th International Conference on Atomic Layer Deposition (ALD 2020) featuring the 7th International Atomic Layer Etching Workshop (ALE 2020) will be a three-day meeting dedicated to the science and technology of atomic layer controlled deposition of thin films and now topics related to atomic layer etching.  Since 2001, the ALD conference has been held alternately in the United States, Europe and Asia, allowing fruitful exchange of ideas, know-how and practices between scientists. This year, the ALD conference will again incorporate the Atomic Layer Etching 2020 Workshop (ALE 2020), so that attendees can interact freely. The conference will take place Sunday, June 28-Wednesday, July 1, 2020, at the International Convention Center in Ghent, Belgium.

As in past conferences, the meeting will be preceded (Sunday, June 28) by one day of tutorials and a welcome reception. Sessions will take place (Monday-Wednesday, June 29-July 1) along with an industry tradeshow. All presentations will be audio-recorded and provided to attendees following the conference (posters will be included as PDFs). Anticipated attendance is 800+.

Awards: Both ALD 2020 and ALE 2020 will recognize student achievement with awards for the best student posters and/or talks. See Awards Page

ALD & ALE Tutorial Speakers and Schedule

Sunday, June 28, 2020

ALD & ALE Plenary Speakers and Schedule

Monday, June 29, 2020

ALD Invited Speakers

• Julien Bachmann (University of Erlangen, Germany), “TBD”
• Annelies Delabie (imec, Belgium), “TBD”
• Keith Gregorczyk (University of Maryland, USA), “Conformal Ion Conductors as Enablers for 3D Solid State Energy Storage Systems”
• Andrew Kummel (University of California, San Diego, USA), “TBD”
• Mark Losego (Georgia Tech, USA), “Vapor Phase Infiltration for Transforming Polymers into Organic Inorganic Hybrid Materials: Process Thermodynamics and Kinetics”
• Catherine Marichy (University Lyon, France), “ALD of BN for Membrane Application in Water Treatment”
• Miika Mattinen (Uhelsinki, Finland), “Exploring ALD 2D Chalcogenides Beyond MoS2”
• Mahdi Shirazi (Eindhoven, The Netherlands), “TBD”
• Henrik Soensteby (University of Oslo, Norway), “Low-temperature Epitaxy of Complex Oxides”
• Myung Mo Sung (Hanyang University, South Korea), “TBD”
• Adriana Szeghalmi (Jena, Germany), “Highly Efficient Antireflection Coatings on Strongly Curved Substrates”
• Nabatame Toshihide (Nippon Institute of Materials Science, Japan), “Study of ALD HfO2-Based High-k for GaN Power Devices and Ferroelectric Devices”
• Rudy Wojtecki (IBM, USA), “TBD”
• Matthias Young (University of Missouri, USA), “From the Noise: Measuring Atomic Structure in Amorphous Thin Films Grown by Atomic Layer Deposition”

ALE Invited Speakers

• Sumiko Fujisaki (Hitachi Ltd., Japan), “Thermal ALE of Co by Organometallic Complexes”
• Akiko Hirata (Sony Semiconductor Solutions Corp., Japan), “Highly Selective Atomic Layer Etching for Semiconductor Application”
• Keren Kanarik (LAM Research, USA), “TBD”
• Moyra McManus (ASML, The Netherlands), “TBD”
• Gottlieb Oehrlein (University of Maryland, USA), “Achieving Selective Material Removal in Plasma-Based Atomic Layer Etching (ALE) of SiO2”
• Steven Steen (ASML, The Netherlands), “TBD”
• Andrew Teplyakov (University of Delaware, USA), “Mechanistic Insights into Thermal Dry Atomic Layer Processing of Metals”
• Dennis van Dorp (imec, Belgium), “TBD”
• Geun Young Yeom (Sungkyunkwan University, South Korea), “Precise Atomic Layer Control of 2D MoS2 by ALE Technique for Device Applications”